C5206

2SC5206 Silicon NPN Triple Diffused Application High power switching Features High breakdown voltage VCBO = 500 V Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC PC*1 Tj Tstg Ratings 500 400 7 5 10 1.8 25 150 –55 to +150 Unit V V V A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown V(BR)CBO voltage 500 Collector to emitter breakdown V(BR)CEO voltage 400 Emitter to base breakdown voltage V(BR)EBO 7 Collector cutoff current Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage ICBO ICEO hFE hFE VCE(sat) — — 20 18 — Base to emitter saturation voltage VBE(sat) — Turn on time ton — Typ — — — — — — — — — 0.5 Storage time tstg — 2.0 Fall time tf — 0.6 Max — Unit V Test conditions IC = 100 µA, IE = 0 —V IC = 10 mA, RBE = ∞ —V IE = 10 mA, IC = 0 100 µA 100 µA — — 1.0 V VCB = 400 V, IE = 0 VCE = 350 V, RBE = 0 VCE = 5 V, IC = 2.5 A VCE = 5 V, IC = 1 mA IC = 2.5 A, IB = 0.5 A 1.5 V IC = 2.5 A, IB = 0.5 A — µsec IC = 5 A, VCC = 150 V, IB1 = –IB2 = 1 A — µsec IC = 5 A, VCC = 150...