2SC5200
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
Unit: mm • • • High br...
2SC5200
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
Unit: mm High breakdown
voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 230 230 5 15 1.5 150 150 −55 to 150
http://www.DataSheet4U.net/
Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-21F1A
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation
voltage Base-emitter
voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 8 A, IB = 0.8 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
Weight: 9.75 g (typ.)
Min ― ― 230 55 35 ― ― ― ― Typ. ― ― ― ― 60 0.4 1.0 30 200 Max 5.0 5.0 ― 160 ― 3.0 1.5 ― ― V V MHz pF Unit µA µA V
Note: hFE (1) classification
R: 55 to 110, O: 80 to 160
1
2004-07-07
datasheet pdf - http://www.DataSheet4U.net/
2SC5200
Marking
Part No. (or abbreviation code) TOS...