DATA SHEET
SILICON TRANSISTOR
2SC5195
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES • Low V...
DATA SHEET
SILICON TRANSISTOR
2SC5195
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES Low
Voltage Operation, Low Phase Distortion Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA Supercompact Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY
PACKING STYLE
2SC5195 2SC5195-T1
In-bulk products (50 pcs.)
Taped products (3 Kpcs/Reel)
Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg
RATING 9 6 2
100 125 150 –65 to +150
UNIT V V V
mA mW ˚C ˚C
0.75±0.05 0.6
1.6±0.1 1.0
0.5 0.5
0.2
+0.1 –0
88
PACKAGE DRAWINGS (Unit: mm)
1.6±0.1 0.8±0.1 2
3 1
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
0 to 0.1
0.15
+0.1 –0.05
0.3
+0.1 –0
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P10398EJ2V0DS00 (2nd edition) (Previous No. TD-2488) Date Published August 1995 P Printed in Japan
© 1994
2SC5195
ELECTRICAL CHARACTERISTIC...