C5177

DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 –0.15 +0.1 Mini-Mold package EIAJ: SC-59 0.95 ORDERING INFORMATION PART NUMBER 2SC5177-T1 QUANTITY 3 000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (emitter) and No. 2 (base) facing the perforations 2.9±0.2 2 T84 0.95 0.3 2SC5177-T2 3 000 units/reel Marking 0.16 –0.06 +0.1 Remark Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). 1.1 to 1.4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 5 3 2 10 30 150 –65 to +150 V V V mA mW °C °C PIN CONNECTIONS 1. Emitter 2. Base 3. Collector CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No. P12101EJ2V0DS00 (2nd edition) (Previous No. TC-2474) Date Published November 1996 N Printed in Japan 0 to 0.1 © +0.1 1 0.4 –0.05 3 1994 ...