TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086
2SC5086
VHF~UHF Band Low Noise Amplifier Applications
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086
2SC5086
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IB IC PC Tj Tstg
20
V
12
V
3
V
40
mA
80
mA
100
mW
125
°C
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 m...