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Manufacture Part Number Description PDF
Siemens
Siemens
C502 8-Bit CMOS Microcontroller
Microcomputer Components
8-Bit CMOS Microcontroller
C502
Data Sheet 08.94

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8-Bit CMOS Microcontroller

C502

Preliminary

q Fully compatible to standard 8051 micr
C502 pdf
Moxa
Moxa
C502 PCI Dual Port Sync Board Manual
C502C502-PCI DualDual-Port Sync Board
	


	




Moxa Technologies Co., Ltd. Tel: +866-2-8919-1230 Fax: +886-2-8919-1231 www.moxa.com support@moxa.com.tw

Free Data
C502 pdf
Won-Top Electronics
Won-Top Electronics
C5020 50A AVALANCHE AUTOMOTIVE CELL DIODE
®
WON-TOP ELECTRONICS
Features
 Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Die Size 220 mil HEX

C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
P
C502 pdf
NEC
NEC
C5021CT-036 UPC5021


















www.DataShe
C502 pdf
Hitachi Semiconductor
Hitachi Semiconductor
C5022 2SC5022
2SC5022
Silicon NPN Triple Diffused

Application
High voltage amplifier

Features
• High breakdown voltage V (BR)CEO = 1500 V Min

Outline
TO-220FM

www.DataSheet.co.kr

12 3

1. Base 2. Collector 3
C502 pdf
Hitachi
Hitachi
C5023 2SC5023

2SC5023
Silicon NPN Epitaxial

Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 1000 MHz typ
• High breakdown voltage and low outpu
C502 pdf
NEC
NEC
C5023CS UPC5023


















www.DataShe
C502 pdf
Won-Top Electronics
Won-Top Electronics
C5024 50A AVALANCHE AUTOMOTIVE CELL DIODE
®
WON-TOP ELECTRONICS
Features
 Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Die Size 220 mil HEX

C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
P
C502 pdf
Hitachi Semiconductor
Hitachi Semiconductor
C5024 Silicon NPN Epitaxial
2SC5024
Silicon NPN Epitaxial

Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 300 MHz typ
• High breakdown voltage and low output capacitance VCEO = 
C502 pdf
Panasonic Semiconductor
Panasonic Semiconductor
C5026 2SC5026
Transistor

2SC5026
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SA1890
Unit: mm

s Features
q q q

4.5±0.1 1.6±0.2

1.5±0.1

1.0–0.2

+0.1

Low coll
C502 pdf
Fairchild Semiconductor
Fairchild Semiconductor
C5027 KSC5027


KSC5027

KSC5027
High Voltage and High Reliability
• High Speed Switching • Wide SOA

1

TO-220 2.Collector 3.Emitter

1.Base

NPN Silicon Transistor
Absolute Maximum Ratings 
C502 pdf
Toshiba Semiconductor
Toshiba Semiconductor
C5027 2SC5027









C502 pdf
Unisonic Technologies
Unisonic Technologies
C5027 2SC5027
UNISONIC TECHNOLOGIES CO., LTD 2SC5027
HIGH VOLTAGE AND HIGH RELIABILITY
.

NPN SILICON TRANSISTOR

FEATURES
* High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA

1

TO-220

1

TO-220F

*Pb-
C502 pdf
ATE
ATE
C5027S Plastic-Encapsulate Transistors
先进科技电子有限公司
Advanced CO.,LTD. Technology Electronics

TO-126

Plastic-Encapsulate Transistors



ATE

先进科技电子有限公司
Advanced CO.,LTD. Technology 
C502 pdf
Toshiba Semiconductor
Toshiba Semiconductor
C5029 2SC5029
2SC5029
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC5029
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm

• • • •

Low saturation
C502 pdf





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