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C4D20120D

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Silicon Carbide Schottky Diode


Description
C4D20120D Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 32 A 132 nC Z-Rec™ Rectifier Features Qc = 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits Replace Bipolar with Uni...



Cree

C4D20120D

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