8A Silicon Carbide Schottky Diode
Description
C4D08120A
4th Generation 1200 V, 8 A Silicon Carbide Schottky Diode
Description
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to ...
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