C4705

Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications · Low-frequency general-purpose amplifier, drivers, muting circuits. Features · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max. · High VEBO : VEBO≥15V. · Small size making it easy to provide high-density, hybrid ICs. Package Dimensions unit:mm 2038A [2SC4705] 4.5 1.6 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.8mm) 1.0 2.5 4.25max 1.5 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Ratings 60 50 15 200 300 40 1.3 150 –55 to +150 Unit V V V mA mA mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking :CP Symbol Conditions ICBO IEBO hFE fT Cob VCB=40V, IE=0 VEB=10V, IC=0 VCE=5V, IC=100mA VCE=10V, IC=10mA VCB=10V, f=1MHz Ratings min typ 800 1500 250 4.0 max 0.1 0.1 3200 Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle...