Ordering number:EN3484
NPN Epitaxial Planar Silicon Transistor
2SC4705
Low-Frequency General-Purpose Amplifier, Applica...
Ordering number:EN3484
NPN Epitaxial Planar Silicon Transistor
2SC4705
Low-Frequency General-Purpose Amplifier, Applications (High hFE)
Applications
· Low-frequency general-purpose amplifier, drivers, muting circuits.
Features
· High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation
voltage :
VCE(sat)≤0.5V max. · High VEBO : VEBO≥15V. · Small size making it easy to provide high-density,
hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SC4705]
4.5 1.6
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Conditions Mounted on ceramic board (250mm2× 0.8mm)
1.0 2.5 4.25max
1.5
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Ratings 60 50 15
200 300
40 1.3 150 –55 to +150
Unit V V V mA mA mA W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance
Marking :CP
Symbol
Conditions
ICBO IEBO hFE
fT Cob
VCB=40V, IE=0 VEB=10V, IC=0 VCE=5V, IC=100mA VCE=10V, IC=10mA VCB=10V, f=1MHz
Ratings min typ
800 1500 250 4.0
max 0.1 0.1
3200
Unit µA µA
MHz pF
Any and all SANYO products described or contained herein do not have specifications that can handle...