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C4518 Datasheet

Part Number C4518
Manufacturers Sanken Electric
Logo Sanken Electric
Description 2SC4518
Datasheet C4518 DatasheetC4518 Datasheet (PDF)

2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol 2SC4518 2SC4518A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 5(Pulse10) 2.5 35(Tc=25°C) 150 –55 to +150 1000 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1..

  C4518   C4518






Part Number C451L
Manufacturers YZPST
Logo YZPST
Description HIGH POWER THYRISTOR
Datasheet C4518 DatasheetC451L Datasheet (PDF)

Technical Data : Page 1 of 3 C451 L - Power Thyristor 2000 VDRM; * HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) C451L 2000 2000 2100 VRRM = Repetitive peak reverse voltage VDRM = Rep.

  C4518   C4518







Part Number C4519
Manufacturers Sanyo
Logo Sanyo
Description 2SC4519
Datasheet C4518 DatasheetC4519 Datasheet (PDF)

Ordering number:EN3138 NPN Epitaxial Planar Silicon Transistors 2SC4519 High-Speed Switching Applications Features · Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package. Package Dimensions unit:mm 2018A [2SC4519] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector .

  C4518   C4518







Part Number C4517A
Manufacturers SavantIC
Logo SavantIC
Description 2SC4517A
Datasheet C4518 DatasheetC4517A Datasheet (PDF)

www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4517 2SC4517A DESCRIPTION ·With TO-220F package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2SC4517 2SC4517A Open emitter VCEO VEBO Coll.

  C4518   C4518







Part Number C4512
Manufacturers Sanken Electric
Logo Sanken Electric
Description 2SC4512
Datasheet C4518 DatasheetC4512 Datasheet (PDF)

2SC4512 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 80 6 6 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) Ratings 10max 10max 80min 50min 0.5max 20typ 110typ V MHz pF 12.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=5A, IB=0.2A V.

  C4518   C4518







2SC4518

2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol 2SC4518 2SC4518A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 5(Pulse10) 2.5 35(Tc=25°C) 150 –55 to +150 1000 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=–0.35A VCB=10V, f=1MHz (Ta=25°C) 2SC4518 2SC4518A 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V V MHz pF Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA V 16.9±0.3 8.4±0.2 µA 13.0min 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 www.DataSheet4U.com sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 139 IC (A) 1.8 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.27 IB2 (A) –0.9 ton (µs) 0.7max tstg (µs) 4max 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 tf (µs) 0.5max Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 5 0 70 mA 600mA V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1.5 I C /I B =5 Const. I C – V BE Temperature Characteristics (Typical) 5 (V CE =4V) Collector Current I C (A) 250 mA 3 1.0 V B E (sat) Collector Curre.


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