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C4417 Datasheet

Part Number C4417
Manufacturers Panasonic
Logo Panasonic
Description 2SC4417
Datasheet C4417 DatasheetC4417 Datasheet (PDF)

Transistors www.DataSheet4U.com 2SC4417 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image (0.425) 0.3+0.1 –0.0 Unit: mm 0.15+0.10 –0.05 ■ Features • High transition frequency fT • Satisfactory linearity of forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 3 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 0.9±0.1 0.9+0.2 –0.1 (0.65) (0.65) 1.3±0.1 2.0±0..

  C4417   C4417






Part Number C4419
Manufacturers SavantIC
Logo SavantIC
Description 2SC4419
Datasheet C4417 DatasheetC4419 Datasheet (PDF)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High reliability ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4419 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC.

  C4417   C4417







Part Number C4418
Manufacturers Sanken electric
Logo Sanken electric
Description 2SC4418
Datasheet C4417 DatasheetC4418 Datasheet (PDF)

2SC4418 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4418 500 400 10 5(Pulse10) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=.

  C4417   C4417







Part Number C4413
Manufacturers Sanyo
Logo Sanyo
Description 2SC4413
Datasheet C4417 DatasheetC4413 Datasheet (PDF)

Ordering number:EN2923 NPN Epitaxial Planar Silicon Transistor 2SC4413 Low-Frequency General-Purpose Amplifier Applications Features · Very small-sized package permitting the 2SC4413applied sets to be made small and slim. · Adoption of FBET process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO. · Small Cob. 0.425 Package Dimensions unit:mm 2059B [2SC4413] 0.3 3 0.15 0.2 0~0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Rating.

  C4417   C4417







Part Number C4412
Manufacturers Sanyo
Logo Sanyo
Description 2SC4412
Datasheet C4417 DatasheetC4412 Datasheet (PDF)

Ordering number:EN3019 NPN Triple Diffused Planar Silicon Transistor 2SC4412 TV Camera Deflection, High-Voltage Driver Applications Features · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.0pF typ). · Excellent DC current gain ratio (hFE ratio : 0.95 typ). · Adoption of FBET process. Package Dimensions unit:mm 2018B [2SC4412] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maxim.

  C4417   C4417







2SC4417

Transistors www.DataSheet4U.com 2SC4417 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image (0.425) 0.3+0.1 –0.0 Unit: mm 0.15+0.10 –0.05 ■ Features • High transition frequency fT • Satisfactory linearity of forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 3 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 0.9±0.1 0.9+0.2 –0.1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 45 35 4 50 150 150 −55 to +150 Unit V V V mA mW °C °C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 2Z ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency * Symbol VCBO VCEO VEBO ICEO hFE VCE(sat) fT Cre Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 20 V, IB = 0 VCE = 10 V, IC = 10 mA IC = 20 mA, IB = 2 mA VCB = 10 V, IE = −10 mA, f = 200 MHz VCB = 10 V, IE = −1 mA, f = 10.7 MHz Min .


2009-07-06 : IQ12-HPX    IQ12-QTC    IQ18-HPC    IQ18-QTC    IQ1B-QTC    IQ24-HP    IQ24-HPC    IQ24-QTC    2N5879    2N5880   


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