C4204

Ordering number:EN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications · AF amplifier, various drivers. Package Dimensions unit:mm 2003B [2SC4204] 5.0 4.0 4.0 Features · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=0.7A). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Ratings 30 25 15 0.7 1.5 0.6 150 –55 to +150 Unit V V V A A W ˚C ˚C www.DataSheet4U.com Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=50mA VCE=5V, IC=500mA VCE=10V, IC=50mA VCB=10V, f=1MHz IC=500mA, IB=10mA IC=500mA, IB=10mA 800 600 270 9 0.15 0.9 0.50 1.2 MHz pF V V 1500 Conditions Ratings min typ max 0.1 0.1 3200 Unit µA µA Any and all SANYO products described or cont...