C4003

Ordering number : ENN2959B 2SC4003 2SC4003 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=300V, IE=0 Emitter Cutoff Current IEBO VEB=4V, IC=0 DC Current Gain hFE VCE=10V, IC=50mA Gain-Bandwidth Product fT VCE=30V, IC=10mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 * : The 2SC4003 is classified by 50mA hFE as follows : Rank D E hFE 60 to 120 100 to 200 Ratings 400 400 5 200 400 1 10 150 --55 to +150 Unit V V V mA mA W W °C °C min 60* 400 400 5 Ratings typ max Unit 0.1 µA 0.1 µA 200* 70 MHz 0.6 V 1.0 V V V V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that requi...