Power Transistors
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
15.0±0.3
5.0±0.2
(0.7)
■ Features
11.0±0.2
(3.2)
High-speed switching
21.0±0.5 15.0±0.2
High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
Satisfactory linearity of forward current transfer ratio hFE Full-pac...
