Ordering number:EN1943A
Features
· Adoption of FBET process. · AF amp.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA...
Ordering number:EN1943A
Features
· Adoption of FBET process. · AF amp.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1392/2SC3383
AF Amp Applications
Package Dimensions
unit:mm 2003A
[2SA1392/2SC3383]
( ) : 2SA1392
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
JEDEC : TO-92 EIAJ : SC-43 SANYO : NF
Conditions
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT
VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)0.1mA VCE=(–)6V, IC=(–)10mA
Collector-to-Emitter Saturation
Voltage Base-to-Emitter Saturation
Voltage Output Capacitance
VCE(sat) VBE(sat)
Cob
IC=(–)100mA, IB=(–)10mA IC=(–)100mA, IB=(–)10mA VCB=(–)6V, f=1MHz
Collector-to-Base Breakdown
Voltage Collector-to-Emitter Breakdown
Voltage Emitter-to-Base Breakdown Votage
V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0
* : The 2SA1392/2SC3383 are classified by 1mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
B : Base C : Collector E : Emitter
Ratings
Unit
(–)60 V
(–)50 V
(–)6 V
(–)200 mA
(–)400 mA
400 mW
150 ˚C
–55 to +150 ˚C
Ratings min typ
100* 70
250 (200)
(–)60 (–...