C3122

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · High gain: Gpe = 24dB (typ.) (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 MHz) · Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 150 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse transfer capacitance Transition frequency Power gain Noise figure AGC voltage ICBO IEBO V (BR) CEO hFE Cre fT Gpe NF VAGC VCB = 25 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCE = 12 V, VAGC = 1.4 V, f = 200 MHz VCC = 12 V, GR = 30dB, f = 200 MHz (Note) ¾ ¾ 30 60 ¾ 400 20 ¾ 3.6 ¾ 100 nA ¾ 100 nA ¾¾ V 150 300 0.3 0.45 pF 650 ¾ MHz 24 28 dB 2.0 3.2 dB 4.4 5.1 V Note: VAGC measured by test circuit shown in Figure 1 when power gain is reduced to 30dB compared that of VAGC at 1.4 V. 1 2003-03-19 2SC3122 L1: RF Coil M-15 T (TOKO Inc.) or equivalent L2: RF Co...