C2910

Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed. Package Dimensions unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 4.7 6.0 3.0 14.0 8.5 0.5 0.6 0.5 0.5 ( ) : 2SA1208 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE fT Cob VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA VCB=(–)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)30mA, IB=(–)3mA * : The 2SA1208/2SC2910 are classified by 10mA hFE are follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 123 1.45 1.45 1 : Emitter 2 : Collector 3 : Base SANYO : MP Ratings (–)180 (–)160 (–)5 (–)70 (–)140 900 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C min 100* Ratings typ max Unit (–)0.1 µA (–)0.1 µA 400* 150 MHz (2.5)2.0 pF 0.08 0.3 (–0.14) (–0.4) V Continued on next page. Any and all SANYO ...