C2310

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION ¡¤ With TO-3PFa package ¡¤ Low collector saturation voltage ¡¤ High breakdown voltage APPLICATIONS ¡¤ For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ¡¤ Absolute maximum ratings(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM IB Collector-base voltage PARAMETER A H C IN Collector current Base current Collector-emitter voltage Emitter-base voltage S E NG Open emitter Open base C I M E CONDITIONS OND R O T UC VALUE 500 400 7 10 20 5 UNIT V V V A A A Open collector Collector current-peak TC=25¡æ PC Collector power dissipation Ta=25¡æ Tj Tstg Junction temperature Storage temperature 100 W 3 150 -55~150 ¡æ ¡æ www.DataSheet4U.com Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3210 CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 400 1.0 1.5 100 100 ¦Ì ¦Ì TYP. MAX UNIT V V V A A SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton tstg tf Fall time A H C IN Storage time Turn-on time EM S E NG D N O IC R ...