C2078

Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCER VEBO IC ICP PC Tj Tstg RBE=150Ω Tc=50˚C Conditions Ratings 80 75 5 3 5 1.2 10 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=0.5A VCE=10V, IC=0.1A VCB=10V, f=1MHz IC=1A, IB=0.1A IC=1A, IB=0.1A 10 µA 10 µA 25* 200* 100 150 MHz 45 60 pF 0.15 0.6 V 0.9 1.2 V * : The 2SC2078 are classified by 0.5A hFE as follows : 25 B 50 40 C 80 60 D 120 100 E 200 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result ...