C1419

SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220 package ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SC1419 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 50 50 5 2 3 20 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC1419 CHARACTERISTICS Tj=25 unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ,IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 50 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 5V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=50V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=4V 35 320 fT Transition frequency IC=0.5A ; VCE=10V 5 MHz 2 SavantIC Semiconductor Silicon NPN P...