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C1185 Datasheet

Part Number C1185
Manufacturers SavantIC
Logo SavantIC
Description Silicon NPN Transistor
Datasheet C1185 DatasheetC1185 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com 2SC1185 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base volta.

  C1185   C1185






Part Number C1187
Manufacturers USHA
Logo USHA
Description Transistors
Datasheet C1185 DatasheetC1187 Datasheet (PDF)

Transistors 2SC1187 .

  C1185   C1185







Silicon NPN Transistor

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com 2SC1185 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 300 250 5 0.7 50 150 -55~150 UNIT V V V A W ? ? SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1185 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 250 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V VBEsat Base-emitter saturation voltage IC=500mA; IB=100mA 1.5 V ICBO Collector cut-off current VCB=200V;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=0.4A ; VCE=10V 40 200 2 SavantIC Semiconductor Product Specification .


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