SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
2SC1170
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
2SC1170
DESCRIPTION ·With TO-3 package ·High
voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=? )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 1200 500 6 3.5 1.0 50 150 -55~150 UNIT V V V A A W ? ?
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT ? /W
Free Datasheet http://www.datasheet4u.net/
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1170
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining
voltage
IC=100mA ;IB=0
500
V
VCEsat
Collector-emitter saturation
voltage
IC=2.5A; IB=0.6A
10
V
VBEsat
Base-emitter saturation
voltage
IC=2.5A; IB=0.6A
1.2
V
ICES
Collector cut-off current
VCE=1200V; VBE=0
1.0
mA
ICBO
Collector cut-off current
VCB=800V; IE=0
20
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
20
µA
hFE-1
DC current gain
IC=0.5A ; VCE=10V
10
hFE-2
...