C106M

isc Thyristors C106M FEATURES ·Glassivated surface for reliability and uniformity ·Practical level triggering and holding characteristics ·Designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation Is important. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TO-126 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(AV) Average on-state current IT(RMS) RMS on-state current PGM Peak gate power PG(AV) Average gate power ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature MIN 600 600 2.5 4 0.5 0.2 20 110 -40~+ 150 UNIT V V A A W W A ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRRM=600V VRRM=600V, Tj= 125℃ IDRM Repetitive peak off-state current VDRM=600V VDRM=600V, Tj= 125℃ IGT Gate trigger current VD= 6V; RL=100Ω, RGK=1KΩ VTM On-state voltage IT= 8A IH Holding current VD=24V, RGK=1KΩ, ITM=4A VGT Gate trigger voltage VD= 12V; RL=100Ω, RGK=1KΩ MIN MAX UNIT 10 200 μA 10 200 μA 10 200 μA 1.75 V 5 mA 0.8 V isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors C106M NOTICE： ISC reserves the rights to make changes of the content herein the ...