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BZT03 Datasheet

Part Number BZT03
Manufacturers NXP
Logo NXP
Description Voltage regulator diodes
Datasheet BZT03 DatasheetBZT03 Datasheet (PDF)

  BZT03   BZT03
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BZT03 series Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Jun 11 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed BZT03 series construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER total power dissipation  a MAM204 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS Ttp = 25 °C; lead length 10 mm; see Fig.2 Tamb = 45 °C; se.






Part Number BZT03D9V1
Manufacturers Vishay
Logo Vishay
Description Zener Diodes
Datasheet BZT03 DatasheetBZT03D9V1 Datasheet (PDF)

  BZT03   BZT03
www.vishay.com BZT03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification 949539 ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Medium power voltage regulators and medium power transient suppression circuits   PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. Test current IZT VZ specification Circuit configuration 6.2 to 300 2 to 100 Pulse current Single UNIT V mA ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE BZT03C6V2 BZT03C6V2-TR BZT03C6V2 B.






Part Number BZT03D91
Manufacturers Vishay
Logo Vishay
Description Zener Diodes
Datasheet BZT03 DatasheetBZT03D91 Datasheet (PDF)

  BZT03   BZT03
www.vishay.com BZT03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification 949539 ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Medium power voltage regulators and medium power transient suppression circuits   PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. Test current IZT VZ specification Circuit configuration 6.2 to 300 2 to 100 Pulse current Single UNIT V mA ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE BZT03C6V2 BZT03C6V2-TR BZT03C6V2 B.






Part Number BZT03D8V2
Manufacturers Vishay
Logo Vishay
Description Zener Diodes
Datasheet BZT03 DatasheetBZT03D8V2 Datasheet (PDF)

  BZT03   BZT03
www.vishay.com BZT03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification 949539 ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Medium power voltage regulators and medium power transient suppression circuits   PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. Test current IZT VZ specification Circuit configuration 6.2 to 300 2 to 100 Pulse current Single UNIT V mA ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE BZT03C6V2 BZT03C6V2-TR BZT03C6V2 B.






Part Number BZT03D82
Manufacturers Vishay
Logo Vishay
Description Zener Diodes
Datasheet BZT03 DatasheetBZT03D82 Datasheet (PDF)

  BZT03   BZT03
www.vishay.com BZT03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification 949539 ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Medium power voltage regulators and medium power transient suppression circuits   PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. Test current IZT VZ specification Circuit configuration 6.2 to 300 2 to 100 Pulse current Single UNIT V mA ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE BZT03C6V2 BZT03C6V2-TR BZT03C6V2 B.






Part Number BZT03D7V5
Manufacturers Vishay
Logo Vishay
Description Zener Diodes
Datasheet BZT03 DatasheetBZT03D7V5 Datasheet (PDF)

  BZT03   BZT03
www.vishay.com BZT03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification 949539 ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Medium power voltage regulators and medium power transient suppression circuits   PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. Test current IZT VZ specification Circuit configuration 6.2 to 300 2 to 100 Pulse current Single UNIT V mA ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE BZT03C6V2 BZT03C6V2-TR BZT03C6V2 B.






Voltage regulator diodes

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BZT03 series Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Jun 11 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed BZT03 series construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER total power dissipation  a MAM204 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS Ttp = 25 °C; lead length 10 mm; see Fig.2 Tamb = 45 °C; see Fig.2; PCB mounted (see Fig.6) MIN. − − − MAX. 3.25 1.30 10 600 300 +175 +175 UNIT W W W W W °C °C PZRM PZSM PRSM Tstg Tj repetitive peak reverse power dissipation non-repetitive peak reverse power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 µs; square pulse; Tj = 25 °C prior to surge; see Fig.3 10/1000 µs exponential pulse (see Fig.4); Tj = 25 °C prior to surge − − −65 −65 1996 Jun 11 2 Philips Semiconductors Product sp.



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