BYV32G-200
Dual ultrafast power diode
Rev.02 - 7 March 2018
Product data sheet
1. General description
Dual ultrafast p...
BYV32G-200
Dual ultrafast power diode
Rev.02 - 7 March 2018
Product data sheet
1. General description
Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package.
2. Features and benefits
High reverse
voltage surge capability High thermal cycling performance Low thermal resistance Very low on-state loss Soft recovery characteristic minimizes power consuming oscillations
3. Applications
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VRRM
repetitive peak reverse
voltage
IO(AV)
average output current
IRRM repetitive peak reverse current
VESD electrostatic discharge
voltage
IFRM repetitive peak forward current
IFSM non-repetitive peak forward current
Symbol Parameter Static characteristics VF forward
voltage Dynamic characteristics
Conditions
δ = 0.5; square-wave pulse; Tmb ≤ 115 °C; both diodes conducting; Fig. 1; Fig. 2 δ = 0.001; tp = 2 μs;
HBM; C = 250 pF; R = 1.5 kΩ; all pins
δ = 0.5; tp = 25 μs; Tmb ≤ 115 °C; per diode tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per diode Conditions
IF = 8 A; Tj = 150 °C; Fig. 4
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; ramp recovery; Fig. 5
IF = 0.5 A to IR = 1 A; Tj = 25 °C; measured at IR= 0.25 A; step recovery; Fig. 6
Values
Unit
200 V 20 A 0.2 A 8 kV 20 A 125 A 137 A Min Typ Max Unit...