Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
GENERAL DESCRIPTION
Dual, low leakage, ...
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward
voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.
BYV133F series
QUICK REFERENCE DATA
SYMBOL VRRM VF IO(AV) PARAMETER BYV133FRepetitive peak reverse
voltage Forward
voltage Average output current (both diodes conducting) MAX. 35 35 0.60 20 MAX. 40 40 0.60 20 MAX. 45 45 0.60 20 UNIT V V A
PINNING - SOT186
PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1 1 k2
1 2 3
a2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 20 20 20 100 110 -45 45 45 45 UNIT V V V A A A A A
Repetitive peak reverse
voltage Crest working reverse
voltage Continuous reverse
voltage Ths ≤ 112 ˚C Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; δ = 0.5; Ths ≤ 61 ˚C
I2t IRRM IRSM Tstg Tj
t = 25 µs; δ = 0.5; Ths ≤ 61 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C pri...