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BY550-800

EIC discrete Semiconductors

SILICON RECTIFIER DIODES

BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * High current capability High surge cur...


EIC discrete Semiconductors

BY550-800

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BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 0.21 (5.33) 0.19 (4.83) 1.00 (25.4) MIN. 0.375 (9.53) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 60°C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 5.0 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF BY550 BY550 BY550 BY550 BY550 BY550 BY550 - 50 - 100 - 200 - 400 - 600 - 800 - 1000 UNIT Volts Volts Volts Amps. 50 35 50 100 70 100 200 140 200 400 280 400 5.0 600 420 600 800 560 800 1000 700 1000 IFSM VF IR IR(H) CJ RθJA...




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