BUX12

isc Silicon NPN Power Transistor BUX12 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching circuits ·Motor control Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 300 V 250 V 7 V 20 A 25 A 4 A 150 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 10A ;IB= 1.25A ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 200V; IB= 0 VCB= 300V; IE= 0 VCB= 300V; IE= 0;TC=125℃ VEB= 5V; IC= 0 hFE-1 DC Cur...