BUW41B

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUW41 450 VCEV Collector-Emitter Voltage VBE= -1.5V BUW41A 550 V BUW41B 650 BUW41 300 VCEO(SUS) Collector-Emitter Voltage BUW41A 350 V BUW41B 400 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ BUW41/A/B isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUW41/A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW41 BUW41A IC= 50mA ; IB= 0 BUW41B V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A IC= 5A; IB= 1A,TC= 150℃ VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICEV Collector Cutoff Current BUW41 BUW41A BUW41B VCE= 450V;VBE= -1.5V VCE= 450V;VBE= -1.5V,TC= 150℃ VCE= 550V;VBE= -1.5V VCE= 550V;VBE= -1.5V,TC= 150℃ VCE= 650V;VBE= -1.5V...