DISCRETE SEMICONDUCTORS
DATA SHEET
BUW11W; BUW11AW Silicon diffused power transistors
Product specification File under ...
DISCRETE SEMICONDUCTORS
DATA SHEET
BUW11W; BUW11AW Silicon diffused power transistors
Product specification File under Discrete Semiconductors, SC06 1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION High-
voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package.
e
BUW11W; BUW11AW
APPLICATIONS Converters Inverters Switching regulators Motor control systems.
MBB008
2 1 3
PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter
1
2
3
MBK117
Fig.1 Simplified outline (SOT429) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUW11W BUW11AW VCEO collector-emitter
voltage BUW11W BUW11AW VCEsat IC ICM Ptot tf collector-emitter saturation
voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig 2 Tmb ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W µs PARAMETER collector-emitter peak
voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak
voltage BUW11W BUW11AW VCEO collector-emitter
voltage BUW11W BUW11AW ...