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BUW1015
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE...
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BUW1015
HIGH
VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE HIGH
VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEED
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APPLICATIONS: HORIZONTAL DEFLECTION FOR HIGH-END COLOUR TV AND 19" MONITORS
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DESCRIPTION The BUW1015 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
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TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB IBM Ptot T stg Tj Parameter Collector-Base
Voltage (I E = 0) Collector-Emitter
Voltage (I B = 0) Emitter-Base
Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1500 700 10 14 18 8 11 160 -65 to 150 150 Unit V V V A A A A W
o o
C C 1/7
February 2002
BUW1015
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.78
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C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES IEBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T j = 125 o C Min. Typ. Max. 0.2 2 100 Unit mA mA µA V
V CEO(sus) ∗ Collector-Emitter Sustaining
Voltage (I B = 0) V EBO VCE(sat) ∗ V BE(sat) ∗ h FE ∗ Emitter-Base
Voltage (I C = 0) Collector-Emitter Saturation
Voltage Base-Emitt...
