BUV46A

® BUV46 BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS s s s s s STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION FAST SWITCHING SPEED 3 1 2 APPLICATIONS GENERAL PURPOSE SWITCHING s SWITCH MODE POWER SUPPLIES s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s TO-220 DESCRIPTION The devices are silicon Multiepitaxial Mesa NPN transistors in the Jedec TO-220 plastic package intended for high voltage, fast switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEX V CEO V EBO IC IB P tot T stg Tj Parameter BUV46 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (V BE = -2.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature o Value BUV46A 1000 1000 450 7 5 3 70 -65 to 150 150 850 850 400 Unit V V V V A A W o o C C January 1999 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEX V CE = V CEX T C = 125 o C Min. Typ. Max. 0.1 1 0.3 2 1 for BUV46 for BUV46A I B = 0.5 A I B = 0.7 A I B = 0.4 A I B = 0.6 A I B = 0.5 A I B = 0.4 A V CC = ...