DatasheetsPDF.com

BUV42 Datasheet

Part Number BUV42
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BUV42 DatasheetBUV42 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV42 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Fast switching times ·Low collector saturation voltage APPLICATIONS ·For switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base volt.

  BUV42   BUV42






Part Number BUV42
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description SILICON NPN SWITCHING TRANSISTOR
Datasheet BUV42 DatasheetBUV42 Datasheet (PDF)

www.DataSheet4U.com BUV42 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION n n n 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CEV V CEO V EBO IC I CM IB I BM P Bas e P tot T s tg Tj Parameter Collector-emitter Voltage (VBE = -1.5V) Collector-emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current B.

  BUV42   BUV42







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV42 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Fast switching times ·Low collector saturation voltage APPLICATIONS ·For switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC.25 Open emitter Open base Open collector CONDITIONS VALUE 350 250 7 12 18 2.5 4 120 200 -65~200 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.46 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. www.datasheet4u.com BUV42 SYMBOL MAX UNIT VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICEV IEBO Collector-emitter sustaining voltage IC=0.2A ; L=25mH IE=50mA; IC=0 IC=2A; IB=0.13A Tj=100 IC=4A; IB=0.4A Tj=100 IC=6A; IB=0.75A Tj=100 IC=4A; IB=0.4A Tj=100 IC=6A; IB=0.75A Tj=100 VCE=VCEV; VBE=-1.5V TC=100 VEB=5V; IC=0 250 V Emitter-base breakdown voltage 7 0.8 0.9 0.9 1.2 1.2 1.5 1.3 V Collector-emitter saturation voltage V Collector-em.


2009-05-20 : SSW-104-01-T-S    SSW-1xx-xx-S-x    SSW-1xx-xx-G-x    SSW-1xx-xx-F-x    MS-7AF    MS-7    MS-7S    MS-7255    11N120CN    STI5200   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)