BUV28

BUV28 SILICON NPN SWITCHING TRANSISTOR s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON APPLICATIONS: SWITCHING REGULATORS s SOLENOID / RELAY DRIVERS s DESCRIPTION High speed transistor suited for low voltage applications. High frequency and efficiency converters switching regulators motor control. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot P tot T stg Tj Parameter Collector-base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc < 25 o C Total Dissipation at T c < 60 o C Storage Temperature Max. Operating Junction Temperature Value 400 200 7 10 15 2 4 85 65 -65 to +175 175 Unit V V V A A A A W W o o C C June 1997 1/4 BUV28 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 5 0Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = 400V T c = 125 C V CE = 400V VBE = -1.5V T c = 125 C V EB = 5 V I C = 0.2 A I E = 50mA I C = 3A I C = 6A I C = 6A I B = 0.3A I B = 0.6A I B = 0.6A L = 25mH 200 7 30 0.7 1.5 2 o o Min. Typ. Max. 3 1 1 Unit mA mA mA V V V V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat) ...