BUV26

SEMICONDUCTORS BUV26 – BUV26A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Value Symbol VCBO VCEO VEBO IC ICM IB IBM Pt Tj Tstg Ratings BUV26 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Base Current Power Dissipation Junction Temperature Storage Temperature range tp = 10ms 85 150 tp = 10ms IE = 0 IB = 0 IC = 0 www.DataSheet.net/ Unit BUV26A 200 100 5 14 25 4 6 65 V V V A A A A W °C -65 to 150 180 90 7 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings From junction to mounting base BUV26 BUV26A Value 1.76 Unit °C/W 29/09/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BUV26 – BUV26A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Value Symbol ICEX IEBO VCE0sust Ratings Collector Cutoff Current (*) Emitter Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter saturation Voltage Test Condition(s) Min BUV26 VCE =VCESMax VBE= 1.5V, TJ= 125°C BUV26A BUV26 VEB= 5 V, IC= 0 BUV26A BUV26 IB= 0 , IC= 0.2 A L = 25 mH BUV26A BUV26 IC= 6 A, IB= 600 mA IC= 5 A, IB= 500 mA BUV26A IC=12 A, IB= 1.2 A BUV26 IC=10 A, IB= 1 A BUV26A IC= 6 A, IB...