BUV21
SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power ...
BUV21
SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
Features
High DC Current Gain:
hFE min = 20 at IC = 12 A
Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
These are Pb−Free Devices*
MAXIMUM RATINGS Rating
Collector−Emitter
Voltage Collector−Base
Voltage Emitter−Base
Voltage Collector−Emitter
Voltage (VBE = −1.5 V) Collector−Emitter
Voltage (RBE = 100 W) Collector−Current − Continuous
− Peak (PW v 10 ms)
Base−Current Continuous Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range
Symbol VCEO(SUS)
VCBO VEBO VCEX VCER
IC ICM IB PD TJ, Tstg
Value 200 250
7 250 240 40 50
8 250 −65 to 200
Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc W _C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max Unit
Thermal Resistance, Junction−to−Case
qJC
0.7 _C/W
Stresses exceeding those listed in...
