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BUV18X Datasheet

Part Number BUV18X
Manufacturers Seme LAB
Logo Seme LAB
Description Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Datasheet BUV18X DatasheetBUV18X Datasheet (PDF)

BUV18X Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector 22.23 (0.875) max. Parameter VCEO* IC(CONT) hFE ft PD Te.

  BUV18X   BUV18X






Part Number BUV18
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet BUV18X DatasheetBUV18 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV18 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 40A ·High Switching Speed APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Cont.

  BUV18X   BUV18X







Part Number BUV18
Manufacturers Seme LAB
Logo Seme LAB
Description Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Datasheet BUV18X DatasheetBUV18 Datasheet (PDF)

BUV18 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector 22.23 (0.875) max. Parameter VCEO* IC(CONT) hFE ft PD Tes.

  BUV18X   BUV18X







Part Number BUV18
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description (BUV18 / BUV19) NPN High Current Switching Transistors
Datasheet BUV18X DatasheetBUV18 Datasheet (PDF)

w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com .

  BUV18X   BUV18X







Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

BUV18X Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector 22.23 (0.875) max. Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 60 90 Units V A - @ 2/40 (VCE / IC) 20 8M 250 Hz W m o c * Maximum Working Voltage . u 4 t This is a shortform datasheet. For a full datasheet please contact [email protected]. e e h s a t a .d plc. Semelab w w w Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Generated 1-Aug-02 www.DataSheet4U.com .


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