BUT18

DISCRETE SEMICONDUCTORS DATA SHEET BUT18; BUT18A Silicon diffused power transistors Product specification Supersedes data of 1997 Aug 13 1999 Jun 11 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. dbook, halfpage BUT18; BUT18A APPLICATIONS Converters Inverters Switching regulators Motor control systems. MBK106 2 1 3 MBB008 PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter 1 2 3 Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUT18 BUT18A VCEO collector-emitter voltage BUT18 BUT18A VCEsat ICsat IC ICM Ptot tf collector-emitter saturation voltage collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Fig.2 see Fig.2 Tmb ≤ 25 °C; see Fig.4 resistive load; see Figs 10 and 11 see Fig.7 open base 400 450 1.5 4 6 12 110 0.8 V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.15 UNIT K/W 1999 Jun 11 2 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUT18 BUT18A VCEO collector-emitter voltage BUT18 BUT18A ICsat IC ICM IB IBM Pt...