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BUT11 Datasheet

Part Number BUT11
Manufacturers NXP
Logo NXP
Description Silicon diffused power transistors
Datasheet BUT11 DatasheetBUT11 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 DESCRIPTION base colle.

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Part Number BUT11
Manufacturers Bourns Electronic Solutions
Logo Bourns Electronic Solutions
Description NPN SILICON POWER TRANSISTOR
Datasheet BUT11 DatasheetBUT11 Datasheet (PDF)

www.DataSheet4U.com BUT11 NPN SILICON POWER TRANSISTOR ● ● ● Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector.

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Part Number BUT11
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BUT11 DatasheetBUT11 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUT11 BUT11A Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT11 BUT11A BUT11 BUT11A CONDITIONS Open emitter VALUE 850 1000 400 450 7 5 10 2 Tmb425.

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Part Number BUT11
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN SILICON POWER TRANSISTOR
Datasheet BUT11 DatasheetBUT11 Datasheet (PDF)

BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter .

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Part Number BUT11
Manufacturers TRSYS
Logo TRSYS
Description NPN SILICON POWER TRANSISTOR
Datasheet BUT11 DatasheetBUT11 Datasheet (PDF)

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Part Number BUT11
Manufacturers Wing Shing Computer Components
Logo Wing Shing Computer Components
Description NPN SILICON TRANSISTOR
Datasheet BUT11 DatasheetBUT11 Datasheet (PDF)

BUT11/11A HIGH VOLTAGE POWER SWITCHING APPLICATIONS NPN SILICON TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Collector Dissipation (Tc=25°c) Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC IC IB IB PC Tj Tstg Rating 850 1000 400 450 9 5 10 2 4 100 150 -65~150 Un.

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Silicon diffused power transistors

DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter MBK106 BUT11; BUT11A andbook, halfpage handbook, halfpage 2 1 MBB008 3 1 2 3 Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig. 4 Tmb ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W 1997 Aug 13 1 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUT11 BUT11A VCEO collector-emitter volt.


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