SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUS13
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DESCRIPTION ·W...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUS13
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High
voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb=25 Open emitter Open base Open collector CONDITIONS MAX 850 400 9 15 30 6 9 175 200 -65~200 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0; L=25mH IC=8A; IB=1.6A IC=8A; IB=1.6A VCE=RatedBVCEO; VBE=0 TC=125 VEB=9V; IC=0 IC=2A ; VCE=5V 15 MIN 400 TYP.
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BUS13
SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE
MAX
UNIT V
1.5 1.6 1.0 4.0 10 50
V V mA mA
Switching times ton ts tf Turn-on time Storage time Fall...