SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUS12
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DESCRIPTION ·W...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUS12
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High
voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 850 400 10 8 125 200 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining
voltage Emitter-base breakdown
voltage Collector-emitter saturation
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Base-emitter saturation
voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; L=25mH IE=10m A;IC=0 IC=5 A;IB=1 A IC=8 A;IB=2.5 A IC=5 A;IB=1 A IC=8 A;IB=2.5 A VCE=850V;VBE=0 TC=125 VEB=10V; IC=0 IC=1A ; VCE=5V 15 MIN 400 10
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BUS12
SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES IEB...