BUP309

BUP 309 IGBT Preliminary data High switching speed Low tail current Latch-up free Avalanche rated Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 1 G Type BUP 309 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V Pin 2 C Ordering Code Q67078-A4204-A2 Pin 3 E VCE IC Package TO-218 AB 1700V 25A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 25 16 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 50 32 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 23 mJ IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot 310 W -55 ... + 150 -55 ... + 150 Jul-30-1996 °C TC = 25 °C Chip or operating temperature Storage temperature Semiconductor Group Tj Tstg 1 BUP 309 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC ≤ 0.4 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 3.5 4.5 1 6.5 4.2 - V VGE = VCE, IC = 1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 15 A, Tj = 150 °C Zero gate voltage c...