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BULT3P3
Medium voltage fast-switching PNP power transistor
Features
■ ■ ■
Low spread of dynamic pa...
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BULT3P3
Medium
voltage fast-switching PNP power transistor
Features
■ ■ ■
Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed
Application
■
Electronic ballast for fluorescent lighting
3 2
SOT-32
1
Description
The device is manufactured using high
voltage multi-epitaxial planar technology for high switching speeds and medium
voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the BULT3N4, its complementary NPN transistor. Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking BULT3P3 Package SOT-32 Packing Tube
Order code BULT3P3
September 2009
Doc ID 16300 Rev 1
1/8
www.st.com 8
Electrical ratings
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BULT3P3
1
Electrical ratings
Table 2.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ
Absolute maximum ratings
Parameter Collector-emitter
voltage (VBE = 0) Collector-emitter
voltage (IB = 0) Emitter-base
voltage (IC = 0, IB = - 1.5 A, tp < 100 µs, TJ < 150 °C) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value -300 -200 V(BR)EBO -3 -6 -1.5 -3 32 -65 to 150 150 Unit V V V A A A A W °C °C
Table 3.
Symbol RthJ...