isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.) ·Low Collec...
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining
Voltage
: VCEO(SUS) = 400V(Min.) ·Low Collector Saturation
Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in relay drivers ,inverters ,switching regulators
and deflection circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter
Voltage
700
V
VCEO Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
9
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-peak
8
A
IB
Base Current-Continuous
2
A
IBM
Base Current-peak
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
4
A
75
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.67 ℃/W
BUL6825
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BUL6825
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 10mA; Ib=0
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 1A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 2A; IB= 0.5A
VCE(sat)-3 Collector-Emitter Saturation
Voltage IC= 4A; IB= 1A
VBE(sat)-1 Base-Emitter Saturation
Voltage
IC...