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BUL129D
High Voltage Fast-Switching NPN Power Transistor
Features
■ ■ ■ ■ ■ PRELIMINARY DATA
NPN T...
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BUL129D
High
Voltage Fast-Switching NPN Power Transistor
Features
■ ■ ■ ■ ■ PRELIMINARY DATA
NPN TRANSISTOR HIGH
VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
1 2 3
Applications
■
ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS
TO-220
Description
The device is manufactured using High
Voltage Multi-Epitaxial Planar technology for high switching speeds while maintaining the wide RBSOA. The device is designed to be used in electronics transformers for halogen lamps.
Internal Schematic Diagram
Order Codes
Part Number BUL129D Marking BUL129D Package TO-220 Packing TUBE
December 2005
rev.1 1/7
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1 Absolute Maximum Ratings
BUL129D
1
Table 1.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ *
Absolute Maximum Ratings
Absolute Maximum Rating
Parameter Collector-Emitter
Voltage (VBE = 0) Collector-Emitter
Voltage (IB = 0) Emitter-Base
Voltage (IC = 0) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25 oC Storage Temperature Max. Operating Junction Temperature Value 800 450 9 4 8 2 4 65 -65 to 150 150 Unit V V V A A A A W
oC oC
Table 2.
Symbol Rthj-case Rthj-amb
Thermal Data
Parameter Thermal Resistance Junction-Case__________________Max Thermal Resistance Junction-ambient _______________Max Value 1.92 62.5 Unit
oC/W oC/W
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BUL129D
2 Electrical Chara...