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BUL128DB
Silicon NPN Power Transistor
Description
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL128DB DESCRIPTION ·Collector–Emitter Sustaining
Voltage
: VCEO(SUS) = 400V(Min.) ·Low Collector Saturation
Voltage
: VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for electronic ballasts for fluorescent lighting. ABSOLUTE MAXIMUM RATIN...
Inchange Semiconductor
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