BUK954R2-55B

BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage - - 55 V ID drain current VGS = 5 V; Tmb = 25 °C; [1] - - 75 A see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C; see Figure 2 dissipation - - 300 W Static characteristics RDSon drain-source on-state resistance VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 - 3.5 4.2 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C - 3.1 3.7 mΩ NXP Semiconductors BUK954R2-55B N-channel TrenchMOS logic level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 75 A; Vsup ≤ 55 ...