BUK765R3-40E
13 July 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General de...
BUK765R3-40E
13 July 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel
MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications 12 V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14
[1] Continuous current is limited by package. [1]
Min -
Typ -
Max 40 75 137
Unit V A W
Static characteristics drain-source on-state resistance 4.2 4.9 mΩ
Dynamic characteristics QGD gate-drain charge 10.1 nC
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NXP Semiconductors
BUK765R3-40E
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol...