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BUK753R1-40E Datasheet

Part Number BUK753R1-40E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet BUK753R1-40E DatasheetBUK753R1-40E Datasheet (PDF)

BUK753R1-40E 11 September 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level.

  BUK753R1-40E   BUK753R1-40E






Part Number BUK753R1-40E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK753R1-40E DatasheetBUK753R1-40E Datasheet (PDF)

BUK753R1-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level.

  BUK753R1-40E   BUK753R1-40E







N-channel TrenchMOS standard level FET

BUK753R1-40E 11 September 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. [1] Min - Typ - Max 40 100 234 Unit V A W Static characteristics drain-source on-state resistance 2.6 3.1 mΩ Dynamic characteristics QGD gate-drain charge 22 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK753R1-40E N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Sym.


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