N-channel TrenchMOS intermediate level FET
Description
D2 PA K
BUK6C3R3-75C
N-channel TrenchMOS intermediate level FET
Rev. 3 — 18 January 2012 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC sta...
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